Preparation of device-quality SiO2 thin films by remote plasma-enhanced chemical vapour deposition (PECVD): Applications in metal-oxide-semiconductor (MOS) devices

1996 ◽  
Vol 6 (2) ◽  
pp. 55-72 ◽  
Author(s):  
Gerald Lucovsky
Keyword(s):  
Thin Films ◽  
Metal Oxide ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Remote Plasma ◽  
Mos Devices

3C-SiC MOS Based Devices: From Material Growth to Device Characterization

2011 ◽  
Vol 679-680 ◽  
pp. 433-436 ◽  
Author(s):  
Jean Lorenzzi ◽  
Romain Esteve ◽  
Nikoletta Jegenyes ◽  
Sergey A. Reshanov ◽  
Adolf Schöner ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Advanced Oxidation Process ◽  
Oxidation Process ◽  
Chemical Vapour ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Heteroepitaxial Growth ◽  
Mos Capacitors ◽  
Surface Polishing

In this work we report on the growth and preparation of 3C-SiC(111) material for metal-oxide-semiconductor (MOS) application. In order to achieve reasonable material quality to prepare MOS capacitors several and crucial steps are needed: 1) heteroepitaxial growth of high quality 3C-SiC(111) layer by vapour-liquid-solid mechanism on 6H-SiC(0001) substrate, 2) surface polishing, 3) homoepitaxial re-growth by chemical vapour deposition and 4) use of an advanced oxidation process combining plasma enhanced chemical vapour deposition (PECVD) SiO2 and short post-oxidation steps in wet oxygen. Combining all these processes the interface traps density (Dit)can be drastically decreased down to 1.2  1010 eV-1cm-2 at 0.63 eV below the conduction band. To our knowledge, these values are the best ever reported for SiC material in general and 3C-SiC in particular.

Electric field assisted aerosol assisted chemical vapour deposition of nanostructured metal oxide thin films

2013 ◽  
Vol 544 ◽  
pp. 452-456 ◽  
Author(s):  
Anupriya J.T. Naik ◽  
Christopher Bowman ◽  
Naitik Panjwani ◽  
Michael E.A. Warwick ◽  
Russell Binions
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Metal Oxide ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Oxide Thin Films ◽  
Metal Oxide Thin Films ◽  
Nanostructured Metal

scholarly journals Chemical vapour deposition (CVD) of nickel oxide using the novel nickel dialkylaminoalkoxide precursor [Ni(dmamp′)2] (dmamp′ = 2-dimethylamino-2-methyl-1-propanolate)

RSC Advances ◽  
2021 ◽  
Vol 11 (36) ◽  
pp. 22199-22205
Author(s):  
Rachel L. Wilson ◽  
Thomas J. Macdonald ◽  
Chieh-Ting Lin ◽  
Shengda Xu ◽  
Alaric Taylor ◽  
...  
Keyword(s):  
Thin Films ◽  
Nickel Oxide ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Hole Transport ◽  
Blocking Layer ◽  
The Novel ◽  
Electron Blocking Layer

We describe CVD of nickel oxide (NiO) thin films using a new precursor [Ni(dmamp′)2], synthesised using a readily commercially available dialkylaminoalkoxide ligand (dmamp′), which is applied to synthesis of a hole transport-electron blocking layer.

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